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1/2 Watt, High Linearity InGaP HBT Amplifier
AH116
The Communications Edge TM Product Information
Product Features
x 800 - 1000 MHz x +28 dBm P1dB x +43 dBm Output IP3 x 17.5 dB Gain @ 900 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5 2 3 4
Applications
x Final stage amplifiers for Repeaters x Mobile Infrastructure
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Frequency Range Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR
Typical Performance (1)
Min
15
Units
MHz dB dB dB dBm dBm dBm dB mA V
Typ
900 17.5 18 7 +28.7 +43 +23 7 250 +5
Max
Parameters
Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dB
Typical
900 17.5 -18 -7 +28.7 +43 +23 7 +5 V @ 250 mA
+27 +42
Noise Figure Operating Current Range (3) Device Voltage
200
300
Noise Figure Supply Bias
1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature
Parameter
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice

-40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC
Rating
Ordering Information
Part No.
AH116-S8G AH116-S8PCB900
Description
900 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1/2 Watt, High Linearity InGaP HBT Amplifier
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 4
April 2006
1/2 Watt, High Linearity InGaP HBT Amplifier
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, calibrated to device leads)
0.8
AH116
The Communications Edge TM Product Information
Typical Device Data
S11
6 0.
1.0
2. 0
6 0.
30 25 20 Gain (dB) 15
0.8
Gain_Maximum Stable Gain
DB(|S[2,1]|) DB(GMax)
0. 4
Swp Max 5.05GHz
S22
Swp Max 5.05GHz
2. 0
0 3.
1.0
4.
0
0.2
5.0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
10
-5. 0
5.0
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Frequency (GHz) 0.8 0.9 1
.4 -0
.4 -0
.0 -2
-0 .6
-0
.6
Swp Min 0.05GHz
-0.8
-
0 2.
-0.8
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 5050 MHz, with markers placed at 0.5 - 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S21 (dB) S21 (ang)
S12 (dB)
-1.0
S12 (ang)
S22 (dB)
S22 (ang)
50 100 200 400 600 800 1000
-2.72 -2.25 -2.31 -3.08 -5.79 -19.72 -6.06
24.16 20.33 17.23 15.63 15.58 15.22 11.91
133.35 124.95 119.37 98.28 69.70 25.60 -22.67
-36.72 -35.31 -34.90 -33.62 -32.10 -31.19 -33.26
29.75 13.96 2.32 -16.36 -37.73 -78.95 -129.67
-2.23 -3.08 -3.32 -3.48 -2.87 -2.27 -1.40
-102.97 -137.03 -159.63 -172.70 -176.25 -179.74 173.15
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning Shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
-1.0
Page 2 of 4
-4 .0
-3 .0
-4 .0 -5. 0
5
.2 -0
2 -0.
Swp Min 0.05GHz
-10.0
0. 4
0 3.
0 4.
5 .0
-10. 0
-3 .0
0.2
10.0
April 2006
1/2 Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25 qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
AH116
The Communications Edge TM Product Information
900 MHz Application Circuit (AH116-S8PCB900)
900 MHz 17.5 dB -18 dB -7 dB +28.7 dBm +43 dBm +23 dBm 7 dB +5 V 250 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
S21 vs Frequency
20 18
S21 (dB) S11 (dB)
S11 vs. Frequency
0 -5 -10 -15 -20 -25 -30 -35 840 +25C +85C -40C 860 880 900 920 940
S22 (dB)
S22 vs. Frequency
0 -5 -10 -15 -20 -25 -30 -35 840 +25C +85C -40C 860 880 900 920 940
16 14 12 10 840 +25C +85C -40C 860 880 900 920 940
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10 8
P1 dB (dBm) NF (dB)
P1 dB vs. Frequency
30 28 26 24 22 20 840 +25C +85C -40C 860 880 900 920 940
ACPR (dBm)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz
Frequency (MHz)
6 4 2 0 840 +25C +80C -40C 860 880 900 920 940
-40 -45 -50 -55 -60 -65 -70 -75 -80 18 19 20 21 22 Output Channel Power (dBm) +25C +85C -40C 23 24
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Frequency
+25, +13 dBm / tone
OIP3 vs. Temperature
freq. = 900, 901 MHz, +13 dBm /tone
OIP3 vs. Output Power
45 43
OIP3 (dBm)
freq. = 900, 901 MHz, +25C
45 43
OIP3 (dBm)
45 43
OIP3 (dBm)
41 39 37 35 840
41 39 37
41 39 37 35
860
880
900
920
940
35 -40 -15 10 35 Temperature (C) 60 85
8
10
12
14
16
18
20
Frequency (MHz)
Output Power (dBm)
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 4
April 2006
1/2 Watt, High Linearity InGaP HBT Amplifier
AH116
The Communications Edge TM Product Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 qC reflow temperature) and lead (maximum 245 qC reflow temperature) soldering processes.
AH116-S8G (Lead-Free Package) Mechanical Information Outline Drawing
Product Marking
The component will be marked with an "AH116G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "AH116-S8" or "ECP052G" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Mounting Configuration / Land Pattern
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tj
MTTF (million hrs)
Rating
100000
MTTF vs. GND Tab Temperature
Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.

-40 to +85 qC 62 qC / W 162 qC
10000
1000
100 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
|
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
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April 2006

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